This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SA2067
Silicon PNP epitaxial planar type
Unit: mm
4.2
±0.2
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■
Features
10.0
±0.2
1.0
±0.2
5.0
±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
13.0
±0.2
18.0
±0.5
Solder Dip
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
stg
tin
Parameter
ue
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE2
f
T
sc
on
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE1 *
Collector-emitter saturation voltage
V
CE(sat)
t
on
t
f
Transition frequency
Turn-on time
Storage time
Fall time
t
stg
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
120 to 250
P
160 to 320
Publication date: January 2003
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1.48
±0.2
2.25
±0.2
0.65
±0.1
0.35
±0.1
0.65
±0.1
1.05
±0.1
0.55
±0.1
0.55
±0.1
2.5
±0.2
2.5
±0.2
•
High speed switching (t
stg
: storage time/t
f
: fall time is short)
•
Low collector-emitter saturation voltage V
CE(sat)
•
Superior forward current transfer ratio h
FE
linearity
•
Allowing automatic insertion eith radial taping
2.5
±0.1
1.2
±0.1
90˚
C 1.0
Rating
−60
−60
−6
−3
−6
15
Unit
V
V
1 2 3
V
A
A
1 : Base
2 : Collector
3 : Emitter
MT-4-A1 Package
Internal Connection
C
W
2.0
B
150
°C
−55
to
+150
°C
E
Conditions
Min
−60
Typ
Max
Unit
V
µA
µA
V
I
C
= −10
mA, I
B
=
0
V
CB
= −60
V, I
E
=
0
V
CE
= −60
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
−100
−100
−1
320
te
na
nc
e/
Di
mA
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
120
40
ain
I
C
= −3
A, I
B
= −
375 mA
−
0.8
0.3
M
V
CE
= −10
V, I
C
= −
0.1 A, f
=
10 MHz
I
C
= −1
A, Resistance loaded
I
B1
= −
0.1 A, I
B2
=
0.1 A
V
CC
=
50 V
90
MHz
µs
µs
0.7
0.15
µs
SJD00286BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
