2SA2057Q 参数 Datasheet PDF下载

Power Transistors

2SA2057

Silicon PNP epitaxial planar type

Unit: mm

Power supply for audio & visual equipments

such as TVs and VCRs

Industrial equipments such as DC-DC converters

■

Features

•

High speed switching (t

stg

: storage time/t

f

: fall time is short)

•

Low collector-emitter saturation voltage V

CE(sat)

•

Superior forward current transfer ratio h

FE

linearity

•

TO-220D built-in: Excellent package with withstand voltage 5 kV

guaranteed

15.0

±0.5

9.9

±0.3

4.6

±0.2

2.9

±0.2

φ

3.2

±0.1

13.7

±0.2

4.2

±0.2

Solder Dip

1.4

±0.2

1.6

±0.2

0.8

±0.1

3.0

±0.5

2.6

±0.1

0.55

±0.15

■

Absolute Maximum Ratings

T

C

=

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

*

Collector power dissipation

T

a

=

25°C

Junction temperature

Storage temperature

T

j

T

stg

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Rating

−60

−60

−6

−3

−6

20

2.0

150

−55

to

+150

°C

°C

Unit

V

V

V

A

A

W

1

2

2.54

±0.30

5.08

±0.50

3

1 : Base

2 : Collector

3 : Emitter

TO-220D-A1 Package

Internal Connection

C

B

E

Note) *: Non-repetitive peak collector current

■

Electrical Characteristics

T

C

=

25°C

±

3°C

Parameter

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Symbol

V

CEO

I

CBO

I

CEO

I

EBO

h

FE1 *

h

FE2

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

V

CE(sat)

f

T

t

on

t

stg

t

f

Conditions

I

C

= −10

mA, I

B

=

0

V

CB

= −60

V, I

E

=

0

V

CE

= −60

V, I

B

=

0

V

EB

= −6

V, I

C

=

0

V

CE

= −4

V, I

C

= −1

A

V

CE

= −4

V, I

C

= −3

A

I

C

= −3

A, I

B

= −

0.375 A

V

CE

= −10

V, I

C

= −

0.1 A, f

=

10 MHz

I

C

= −1

A, Resistance loaded

I

B1

= −

0.1 A, I

B2

=

0.1 A

V

CC

=

50 V

90

0.15

0.4

0.10

0.30

0.7

0.15

120

40

−

0.5

V

MHz

µs

µs

µs

Min

−60

−100

−100

−1

320

Typ

Max

Unit

V

µA

µA

mA



Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE1

Publication date: January 2003

Q

120 to 250

P

160 to 320

SJD00284BED

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