This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2057
P
C
T
a
35
(1) T
C
=
T
a
(2) Without heat sink
−6
V
CE
= −4
V
30
25
(1)
20
15
10
5
0
I
C
V
BE
−10
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
I
C
/ I
B
= 8
Collector power dissipation P
C
(W)
Collector current I
C
(A)
T
a
=
100°C
25°C
−1
T
a
=
100°C
−4
M
Di ain
sc te
on na
tin nc
ue e/
d
−
0.1
25°C
−2
−25°C
−25°C
−
0.01
(2)
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(°C)
h
FE
I
C
10000
V
CE
= −4
V
Collector current I
C
(A)
1000
T
a
=
100°C
100
25°C
−25°C
10
1
−
0.01
−
0.1
−1
−10
1 000
Di
sc
on
tin
R
th
t
ue
Collector current I
C
(A)
Thermal resistance R
th
(°C/W)
100
1
M
10
0.1
0.001
0.01
0.1
1
Time t (s)
2
Pl
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ea
ne clu
se
pla m d de
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tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
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ge
/e a
n/ tio
.
n.
0
0
−
0.4
−
0.8
−1.2
−
0.001
−
0.01
−
0.1
−1
−10
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
Safe operation area
−100
Non repetitive pulse
T
C
= 25°C
Forward current transfer ratio
h
FE
−10
I
CP
I
C
t
=
10 ms
t
=
1s
t
=
1 ms
−1
−
0.1
−
0.01
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
T
a
=
25°C
te
na
nc
e/
(1)
(2)
ain
(1) Without heat sink
(2) With 100
×
100
×
2 mm Al
10
100
1 000
SJD00284BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
