Transistors
2SA2028
Silicon PNP epitaxial planer type
Unit: mm
(0.425)
For DC-DC converter
I
Features
•
Large current capacitance
•
Low collector to emitter saturation voltage
•
High-speed switching
•
Small type package, allowing downsizing and thinning of the
equipment.
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
5°
1
2
0.2
±0.1
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10°
0.9
±0.1
0.9
+0.2
–0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
−20
−20
−5
−3
−1
150
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S Mini Type Package (3-pin)
Marking Symbol: AT
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
*
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
C
ob
f
T
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
, I
C
=
0
V
CE
= −2
V, I
C
= −100
mA
I
C
= −200
mA, I
B
= −10
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
V
CB
= −10
V, I
E
=
10 mA
f=200 MHz
Min
−20
−20
−5
160
−40
20
170
560
−100
30
mV
pF
MHz
Typ
Max
Unit
V
V
V
0 to 0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
