Transistors
2SA2009
Silicon PNP epitaxial planer type
Unit: mm
(0.425)
For low-frequency high breakdown voltage amplification
I
Features
•
High collector to emitter voltage V
CEO
•
Low noise voltage NV
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
5˚
1
2
0.2
±0.1
(0.65) (0.65)
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
−120
−120
−5
−50
−20
150
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
10˚
1.3
±0.1
2.0
±0.2
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S Mini Type Package (3-pin)
Marking Symbol: AR
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
*
Collector to emitter saturation voltage
Noise voltage
Transition frequency
Note) *: Rank classification
Rank
h
FE
R
180 to 360
S
260 to 520
T
360 to 700
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
NV
f
T
Conditions
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CE
= −5
V, I
C
= −2
mA
I
C
= −20
mA, I
B
= −2
mA
V
CE
= −40
V, I
C
= −1
mA, G
V
=
80 dB
R
g
=
100 kW, Function
=
FLAT
V
CB
= −5
V, I
E
=
2 mA, f
=
200 MHz
130
120
−120
−120
−5
180
700
−
0.6
V
mV
MHz
Min
Typ
Max
−100
−1
Unit
nA
µA
V
V
V
0 to 0.1
0.9
±0.1
0.9
+0.2
–0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
