Transistor
2SA1890
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC5026
Unit: mm
s
Features
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
q
q
q
1.0
–0.2
Low collector to emitter saturation voltage V
CE(sat)
.
High collector to emitter voltage V
CEO
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25˚C)
0.4max.
45°
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25˚C)
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
–80
–80
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
marking
Marking symbol :
1Z
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –40V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –100mA
V
CE
= –2V, I
C
= –500mA
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
=
–50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–80
–80
–5
120
60
– 0.2
– 0.85
120
15
*2
min
typ
max
– 0.1
2.5±0.1
+0.25
Unit
µA
V
V
V
340
– 0.3
–1.2
V
V
MHz
30
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
120 ~ 240
R
170 ~ 340
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
