Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
4.0±0.2
3.0±0.2
Unit: mm
s
Features
q
High collector to emitter voltage V
CEO
.
15.6±0.5
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
0.7±0.1
Ratings
–150
–150
–5
–100
–50
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54±0.15
EIAJ:SC–72
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
(Ta=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –100µA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30mA, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= – 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
150
200
5
–150
–5
90
450
–1
V
MHz
pF
mV
min
typ
max
–1
Unit
µA
V
V
*1
h
FE
Rank classification
Q
90 ~ 155
R
130 ~ 220
S
185 ~ 330
T
260 ~ 450
Rank
h
FE
2.0±0.2
marking
+0.2
0.45–0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
