Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
4.0
±0.2
(0.8)
3.0
±0.2
Unit: mm
2.0
±0.2
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Pl
*1
h
FE
Rank classification
Q
90 ~ 155
R
130 ~ 220
S
185 ~ 330
T
260 ~ 450
Rank
h
FE
160
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s
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–150
–150
–5
V
V
V
(2.5) (2.5)
0.7
±0.1
1
2
3
M
Di ain
sc te
on na
tin nc
ue e/
d
q
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
Parameter
Symbol
(Ta=25˚C)
Ratings
Unit
0.45
+0.20
–0.10
15.6
±0.5
(0.8)
0.75 max.
7.6
s
Features
0.45
+0.20
–0.10
–100
–50
300
150
mA
mA
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
NS-B1 Package
–55 ~ +150
(Ta=25˚C)
Symbol
Conditions
min
typ
max
–1
Unit
µA
V
V
I
CBO
V
CB
= –100V, I
E
= 0
I
C
= –100µA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CEO
V
EBO
h
FE*1
f
T
–150
–5
90
V
CE
= –5V, I
C
= –10mA
450
–1
V
CE(sat)
C
ob
I
C
= –30mA, I
B
= –3mA
V
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
200
MHz
pF
5
NV
V
CE
= –10V, I
C
= – 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
150
mV
PANASONIC [ PANASONIC SEMICONDUCTOR ]
