Transistor
Switching time measurement circuit
t
on
, t
off
Test Circuit
V
BB
2kΩ
0.1µF
V
in
51Ω
52Ω
V
CC
=–1.5V
62Ω
V
out
2SA1806
P
C
— Ta
t
stg
Test Circuit
V
BB
=–10V
508Ω
0.1µF
V
in
51Ω
34Ω
V
CC
=–3V
30Ω
V
out
150
Collector power dissipation P
C
(mW)
125
100
75
V
in
V
out
0
10%
90%
90%
10%
V
in
V
out
0
90%
90%
t
off
V
in
=9.0V
50
25
t
on
t
off
V
in
=–5.8V
V
in
=9.8V
V
BB
=Ground V
BB
=–8.0V
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–60
Ta=25˚C
–50
I
B
=–600µA
–500µA
–40
–400µA
–300µA
–30
–200µA
–20
–100µA
–10
–100
–30
–10
–3
–1
V
CE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
V
BE(sat)
— I
C
I
C
/I
B
=10
Collector current I
C
(mA)
Ta=75˚C
25˚C
–25˚C
Ta=–25˚C
25˚C
75˚C
– 0.3
– 0.1
– 0.03
– 0.01
–1
– 0.3
– 0.1
– 0.03
– 0.01
–1
0
0
–2
–4
–6
–8
–10
–12
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
h
FE
— I
C
240
V
CE
=–10V
2400
f
T
— I
E
Collector output capacitance C
ob
(pF)
V
CB
=–10V
f=200MHz
Ta=25˚C
2.4
C
ob
— V
CB
I
E
=0
f=1MHz
Ta=25˚C
Forward current transfer ratio h
FE
200
Transition frequency f
T
(MHz)
2000
2.0
160
1600
1.6
120
Ta=75˚C
80
25˚C
40
–25˚C
1200
1.2
800
0.8
400
0.4
0
– 0.1 – 0.3
0
–1
–3
–10
–30
–100
1
3
10
30
100
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
