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2SA1806JQ 参数 Datasheet PDF下载

2SA1806JQ图片预览
型号: 2SA1806JQ
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用:
文件页数/大小: 2 页 / 43 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SA1806JQ的Datasheet PDF文件第2页  
Transistor
2SA1806
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
1.6±0.15
s
Features
q
q
q
0.4
0.8±0.1
0.4
0.2
–0.05
0.15
–0.05
+0.1
High-speed switching.
Low collector to emitter saturation voltage V
CE(sat)
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25˚C)
Ratings
–15
–15
–4
–100
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol :
AK
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
(Ta=25˚C)
Symbol
I
CBO
I
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= –8V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –1V, I
C
= –10mA
V
CE
= –1V, I
C
= –1mA
I
C
= –10mA, I
B
= – 1mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –5V, I
E
= 0, f = 1MHz
(Note 1) Next page
(Note 1) Next page
(Note 1) Next page
800
50
30
– 0.1
1500
1
12
20
19
– 0.2
V
MHz
pF
ns
ns
ns
min
typ
max
– 0.1
– 0.1
150
Unit
µA
µA
*
h
FE1
Rank classification
Rank
h
FE1
Q
50 ~ 120
AKQ
R
90 ~ 150
AKR
Marking Symbol
0 to 0.1
0.2±0.1
+0.1
s
Absolute Maximum Ratings
1