Transistor
P
C
— Ta
150
–120
Ta=25˚C
125
–100
–50
2SA1791
I
C
— V
CE
–60
V
CE
=–10V
25˚C
Ta=75˚C
–40
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
100
–80
I
B
=–300µA
–250µA
75
–60
Collector current I
C
(mA)
–200µA
–150µA
–30
50
–40
–100µA
–20
–20
25
–50µA
–10
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
I
C
/I
B
=10
600
h
FE
— I
C
600
V
CE
=–10V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
–25˚C
300
Transition frequency f
T
(MHz)
–3
–10
–30
–100
500
400
300
– 0.3
Ta=75˚C
25˚C
–25˚C
– 0.1
– 0.03
– 0.01
–1
200
200
100
100
–3
–10
–30
–100 –300 –1000
0
– 0.1 – 0.3
–1
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
6
Collector output capacitance C
ob
(pF)
5
I
E
=0
f=1MHz
Ta=25˚C
4
3
2
1
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
