This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1791G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656G
■
Features
■
Package
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Di
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
V
CE(sat)
C
ob
ain
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
200 to 400
R
250 to 500
Publication date: May 2007
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Rating
−50
−50
−5
−50
125
125
Unit
V
V
V
mA
°C
mW
°C
−55
to
+125
Conditions
Min
−50
−5
−50
Typ
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
V
V
CB
= −10
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
−
0.1
−100
500
µA
V
µA
V
CE
=
−10
V, I
C
=
−2
mA
I
C
= −10
mA, I
B
= −1
mA
200
−
0.1
250
1.5
−
0.3
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
MHz
pF
SJC00380AED
M
te
na
nc
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M
Di ain
sc te
on na
tin nc
ue e/
d
•
High transition frequency f
T
•
Small collector output capacitance C
ob
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
•
Code
SSMini3-F3
•
Marking Symbol: AL
•
Pin Name
1. Base
2. Emitter
3. Collector
sc
on
tin
ue
1