2SA1790G 参数 Datasheet PDF下载

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA1790G

Silicon PNP epitaxial planar type

For high-frequency amplification

Complementary to 2SC4626G

■

Features

■

Package

■

Absolute Maximum Ratings

T

a

=

25°C

Parameter

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Collector power dissipation

Junction temperature

Storage temperature

T

stg

■

Electrical Characteristics

T

a

=

25°C

±

3°C

Parameter

Symbol

V

BE

ue

Base-emitter voltage

tin

Collector-base cutoff current (Emitter open)

I

CBO

I

CEO

I

EBO

h

FE

f

T

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

te

na

nc

e/

Forward current transfer ratio

*

Collector-emitter saturation voltage

Transition frequency

Noise figure

V

CE(sat)

NF

Z

rb

Reverse transfer impedance

Reverse transfer capacitance (Common emitter)

C

re

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE

B

70 to 140

C

110 to 220

Publication date: May 2007

Pl

pla d in

ea

ne clu

se

pla m d de

ht visi

ne ai ma s fo

tp t f

:// ol d d d nte inte llow

ww lo is is na n

i

w. win con con nce anc ng f

se g U tin tin t e ou

m R ue ue yp typ r P

ico L d d e

e

ro

ab ty ty

n.

du

pa ou pe pe

ct

d

na t l

life

so ate

cy

nic st

cle

.co inf

sta

.jp orm

ge

/e a

n/ tio

.

n.

Rating

−30

−20

−5

−30

125

125

Unit

V

V

V

mA

°C

mW

°C

−55

to

+125

Conditions

Min

Typ

Max

Unit

V

µA

µA



V

V

CE

= −10

V, I

C

= −1

mA

V

CB

= −10

V, I

E

=

0

V

CE

= −20

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

−

0.7

−

0.1

−100

−10

220

µA

V

CE

=

−10

V, I

C

=

−1

mA

I

C

= −10

mA, I

B

= −1

mA

70

−

0.1

300

2.8

22

V

CB

= −10

V, I

E

=

1 mA, f

=

200 MHz

V

CB

= −10

V, I

E

=

1 mA, f

=

5 MHz

V

CB

= −10

V, I

E

=

1 mA, f

=

2 MHz

150

MHz

dB

Ω

4.0

50

V

CB

= −10

V, I

E

=

1 mA, f

=

10.7 MHz

1.2

2.0

pF

SJC00379AED

M

ain

M

Di ain

sc te

on na

tin nc

ue e/

d

•

Optimum for RF amplification of FM/AM radios

•

High transition frequency f

T

•

SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

•

Code

SSMini3-F3

•

Marking Symbol: E

•

Pin Name

1. Base

2. Emitter

3. Collector

Di

sc

on

1