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2SA1748 参数 Datasheet PDF下载

2SA1748图片预览
型号: 2SA1748
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型 [Silicon PNP epitaxial planer type]
分类和应用: 晶体小信号双极晶体管光电二极管放大器
文件页数/大小: 2 页 / 38 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SA1748的Datasheet PDF文件第2页  
Transistor
2SA1748
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4562
2.1±0.1
Unit: mm
s
Features
q
q
q
0.425
1.25±0.1
0.425
High transition frequency f
T
.
Small collector output capacitance C
ob
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–50
–50
–5
–50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.7±0.1
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
AL
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –10mA, I
B
= –1mA
V
CB
= –10V, I
E
= 2mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–50
–50
–5
200
– 0.1
250
1.5
500
– 0.3
V
MHz
pF
min
typ
max
– 0.1
–100
Unit
µA
µA
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
200 ~ 400
ALQ
R
250 ~ 500
ALR
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta=25˚C)
0.2
0.3
–0
+0.1
1