This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1739
Silicon PNP epitaxial planar type
For high speed switching
(0.425)
Unit: mm
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
Complementary to 2SC3938
■
Features
M
Di ain
sc te
on na
tin nc
ue e/
d
1.25
±0.10
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
I
CBO
I
EBO
h
FE2
f
T
ue
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE1 *
te
na
nc
e/
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
C
ob
t
on
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Turn-off time
Storage time
t
off
t
stg
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Marking symbol
Q
50 to 120
AXQ
R
90 to 150
AXR
No-rank
50 to 150
AX
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
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1
2
5˚
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
Rating
−15
−15
−4
−50
150
150
Unit
V
V
10˚
0.9
±0.1
0.9
+0.2
–0.1
V
mA
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
−100
mA
°C
mW
°C
Marking Symbol: AX
−55
to
+150
Conditions
Min
Typ
0 to 0.1
Max
Unit
µA
µA
V
V
CB
= −8
V, I
E
=
0
V
CE
= −3
V, I
C
=
0
−
0.1
−
0.1
150
tin
sc
on
V
CE
= −1
V, I
C
= −10
mA
V
CE
= −1
V, I
C
= −1
mA
I
C
= −10
mA, I
B
= −1
mA
50
30
Di
−
0.1
1
−
0.2
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
−5
V, I
E
= 0, f = 1 MHz
Refer to the switching time
measurement circuit
800
1 500
MHz
pF
ns
ain
12
M
20
ns
19
ns
0.2
±0.1
•
High speed switching
•
Low collector-emitter saturation voltage V
CE(sat)
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
2.1
±0.1
SJC00027BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
