Transistor
2SA1619, 2SA1619A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC4208 and 2SC4208A
5.0±0.2
4.0±0.2
Unit: mm
s
Features
q
0.7±0.2
8.0±0.2
+0.15
q
Complementary pair with 2SC4208 and 2SC4208A.
Allowing supply with the radial taping and automatic insertion
possible.
(Ta=25˚C)
Ratings
–30
–60
–25
–50
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
Parameter
Collector to
base voltage
Collector to
2SA1619
2SA1619A
2SA1619
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5±0.5
s
Absolute Maximum Ratings
0.7±0.1
0.45
–0.1
0.45
–0.1
+0.15
emitter voltage 2SA1619A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
W
˚C
˚C
1 2 3
2.54±0.15
2.3±0.2
V
1.27
1.27
1:Emitter
2:Collector
3:Base
TO–92NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SA1619
2SA1619A
2SA1619
2SA1619A
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –10mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–5
85
40
– 0.35
–1.1
200
6
15
– 0.6
–1.5
V
V
MHz
pF
160
340
min
typ
max
– 0.1
Unit
µA
V
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
