Power Transistors
2SA1550
Silicon PNP triple diffusion planar type
Unit: mm
7.0±0.3
3.5±0.2
For power switching
3.0±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
s
Features
q
q
q
q
7.2±0.3
0.8±0.2
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to base voltage
(T
C
=25˚C)
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
T
stg
–55 to +150
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25˚C)
ue
Symbol
tin
I
CBO
I
EBO
Collector to emitter voltage
V
CEO
h
FE1*
h
FE2
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
80 to 160
P
130 to 280
Rank
h
FE1
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
2.3±0.2
4.6±0.4
2
1
3
High foward current transfer ratio h
FE
High-speed switching
High collector to base voltage V
CBO
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
1.1±0.1
0.85±0.1
0.4±0.1
1.0±0.2
10.0
–0.
+0.3
0.75±0.1
1:Base
2:Collector
3:Emitter
I Type Package
Ratings
–400
–400
–7
Unit
V
V
V
A
A
7.0±0.3
3.5±0.2
Unit: mm
0 to 0.15
2.0±0.2
3.0±0.2
1.0 max.
10.2±0.3
– 0.5
15
2.5
1.3
W
0.75±0.1
0.5 max.
0.9±0.1
1.1±0.1
0 to 0.15
1
2
3
150
˚C
˚C
2.3±0.2
4.6±0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
Conditions
min
typ
max
Unit
µA
µA
V
V
CB
= –400V, I
E
= 0
V
EB
= –7V, I
C
= 0
I
C
= –10mA, I
B
= 0
–100
–100
sc
on
–400
80
10
Di
te
na
nc
e/
V
CE
= –5V, I
C
= –50mA
280
V
CE
= –5V, I
C
= –300mA
I
C
= –200mA, I
B
= –40mA
I
C
= –200mA, I
B
= –40mA
I
C
= –300mA,
V
CC
= –200V
–1.5
–1.5
V
V
ain
V
CE
= –10V, I
C
= –100mA, f = 1MHz
20
MHz
µs
µs
µs
M
0.25
2.0
0.5
I
B1
= –60mA, I
B2
= 60mA,
2.5±0.2
–1.0
7.2±0.3
1.0
2.5±0.2
1.0
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
