Power Transistors
P
C
— Ta
Collector to emitter saturation voltage V
CE(sat)
(V)
32
2SA1535, 2SA1535A
V
CE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
–3
I
C
/I
B
=10
–10
V
BE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(W)
Without heat sink
28
24
20
16
12
8
4
0
0
20
40
60
80 100 120 140 160
–1
–3
T
C
=–25˚C
100˚C
25˚C
–1
– 0.3
25˚C
T
C
=100˚C
–25˚C
– 0.3
– 0.1
– 0.1
– 0.03
– 0.03
– 0.01
– 0.01
– 0.03
– 0.1
– 0.3
–1
– 0.01
– 0.01 – 0.03
– 0.1
– 0.3
–1
–3
Ambient temperature Ta (˚C)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
— I
C
400
1000
V
CE
=–10V
f
T
— I
E
100
V
CB
=–10V
f=10MHz
T
C
=25˚C
300
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
T
C
=25˚C
80
Forward current transfer ratio h
FE
300
T
C
=–25˚C
100
100˚C
30
25˚C
Transition frequency f
T
(MHz)
60
200
40
10
100
20
3
1
– 0.01 – 0.03
– 0.1
– 0.3
–1
–3
0
0.01
0.03
0.1
0.3
1
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Emitter current I
E
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
–10
–3
Single pulse
T
C
=25˚C
I
CP
t=1ms
I
C
Collector current I
C
(A)
–1
– 0.3
– 0.1
– 0.03
– 0.01
10ms
– 0.003
– 0.001
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
2
2SA1535A
2SA1535
t=<50µs
DC
PANASONIC [ PANASONIC SEMICONDUCTOR ]
