Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
4.0
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
High transition frequency f
T
Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
(T
C
=25˚C)
Ratings
–150
–180
–150
–180
–5
–1.5
–1
15
2.0
150
–55 to +150
Unit
V
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
14.0±0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SA1535
2SA1535A
2SA1535
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
V
CBO
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
emitter voltage 2SA1535A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SA1535
2SA1535
2SA1535A
(T
C
=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –150V, I
E
= 0
I
C
= –1mA, I
B
= 0
I
C
= –100µA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CE
= –10V, I
C
= –50mA, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–150
–180
–5
90
50
160
100
– 0.5
–1.0
200
30
50
–2.0
–2.0
V
V
MHz
pF
220
min
typ
max
–10
Unit
µA
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE1
Rank classification
Q
90 to 155
R
130 to 220
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
