Transistor
2SA1532
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3930
2.1±0.1
Unit: mm
s
Features
q
q
0.425
1.25±0.1
0.425
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25˚C)
Ratings
–30
–20
–5
–30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
0.2
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector to emitter saturation voltage
Base to emitter voltage
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
f
T
V
CE(sat)
V
BE
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA
f = 10.7MHz
70
150
300
– 0.1
– 0.7
2.8
22
1.2
4.0
60
2.0
min
typ
max
– 0.1
–100
–10
220
MHz
V
V
dB
Ω
pF
Unit
µA
µA
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
B
70 ~ 140
EB
C
110 ~ 220
EC
0.15
–0.05
+0.1
0.3
–0
+0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
