This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1532
Silicon PNP epitaxial planar type
For low-frequency amplification
(0.425)
Unit: mm
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
Complementary to 2SC3930
■
Features
M
Di ain
sc te
on na
tin nc
ue e/
d
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1.25
±0.10
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Collector current
−5
V
−30
150
150
mA
°C
Collector power dissipation
Junction temperature
Storage temperature
mW
°C
Marking Symbol: E
T
stg
−55
to
+150
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
BE
Conditions
Min
0 to 0.1
Collector-emitter voltage (Base open)
ue
Base-emitter saturation voltage
tin
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
I
EBO
h
FE
f
T
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
te
na
nc
e/
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise figure
V
CE(sat)
NF
Z
rb
Reverse transfer impedance
Common-emitter reverse transfer capacitance
C
re
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
A
50 to 100
B
70 to 140
C
110 to 220
Publication date: January 2003
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5°
2.1
±0.1
Rating
−30
−20
Unit
V
V
10°
0.9
±0.1
0.9
+0.2
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Typ
Max
Unit
V
µA
µA
V
V
CE
= −10 µA,
I
C
= −1
mA
V
CB
= −10
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
−
0.7
−
0.1
−100
−10
220
Di
sc
on
µA
V
CB
= −10
V, I
E
=
1 mA
50
I
C
= −10
mA, I
B
= −1
mA
−
0.1
300
2.8
22
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
5 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
2 MHz
150
MHz
dB
Ω
4.0
60
M
ain
V
CB
= −10
V, I
E
=
1 mA, f
=
10.7 MHz
1.2
2.0
pF
0.2
±0.1
SJC00021BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
