Transistor
P
C
— Ta
240
–160
–140
200
2SA1531, 2SA1531A
I
C
— V
CE
Ta=25˚C
–160
V
CE
=–5V
Ta=25˚C
–140
I
C
— I
B
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
–120
–100
–80
–60
–300µA
–250µA
–200µA
–150µA
–100µA
160
120
Collector current I
C
(mA)
I
B
=–350µA
–120
–100
–80
–60
–40
–20
0
80
–40
–50µA
–20
40
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
– 0.1
– 0.2
– 0.3
– 0.4
– 0.5
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
I
B
— V
BE
–800
V
CE
=–5V
Ta=25˚C
–700
–100
–120
I
C
— V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
V
CE
=–5V
25˚C
Ta=75˚C
–80
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Base current I
B
(
µA
)
–600
–500
–400
–300
–200
–100
0
0
– 0.2
– 0.4
– 0.6
– 0.8
–1.0
Collector current I
C
(mA)
–60
–40
– 0.3
25˚C
– 0.1
Ta=75˚C
–20
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
–1
–3
–10
–30
–100
Base to emitter voltage V
BE
(V)
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
=–5V
500
450
500
Ta=75˚C
400
25˚C
f
T
— I
E
Collector output capacitance C
ob
(pF)
V
CB
=–5V
Ta=25˚C
20
18
16
14
12
10
8
6
4
2
0
– 0.1 – 0.3
C
ob
— V
CB
I
E
=0
f=1MHz
Ta=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
–10
–30
–100
400
350
300
250
200
150
100
50
300
–25˚C
200
100
0
– 0.1 – 0.3
–1
–3
0
0.1
0.3
1
3
10
30
100
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
