Transistor
2SA1531, 2SA1531A
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3929 and 2SC3929A
Unit: mm
s
Features
q
q
q
2.1±0.1
0.425
1.25±0.1
0.425
Low noise voltage NV.
High foward current transfer ratio h
FE
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25˚C)
Ratings
–35
–55
–35
–55
–5
–100
–50
150
150
–55 ~ +150
Unit
0.65
1
2.0±0.2
1.3±0.1
0.65
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SA1531
2SA1531A
2SA1531
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
2
0.9±0.1
0 to 0.1
emitter voltage 2SA1531A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
0.7±0.1
0.2±0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
F
(2SA1531)
H
(2SA1531A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SA1531
2SA1531A
2SA1531
2SA1531A
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
*2
V
CE
= –1V, I
C
= –100mA
*2
V
CB
= –10V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
*2
min
typ
max
–100
–1
0.15
–0.05
+0.1
V
0.2
0.3
–0
+0.1
Unit
nA
µA
V
–35
–55
–35
–55
–5
180
700
– 0.6
– 0.7
80
150
–1.0
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*1
h
FE1
V
V
MHz
mV
Rank classification
Rank
hFE
R
180 ~ 360
FR
HR
S
260 ~ 520
FS
HS
T
360 ~ 700
FT
HT
Pulse measurement
Marking
Symbol
2SA1531
2SA1531A
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
