Power Transistors
P
C
— Ta
20
– 0.8
(1) T
C
=Ta
(2) Without heat sink
(P
C
=1.3W)
15
T
C
=25˚C
– 0.7
I
B
=–40mA
2SA1495
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=5
–30
–10
–3
–1
T
C
=100˚C
V
CE(sat)
— I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
– 0.6
– 0.5
– 0.4
– 0.3
– 0.2
– 0.1
0
–10mA
–8mA
–6mA
–4mA
M
Di ain
sc te
on na
tin nc
ue e/
d
10
(1)
– 0.3
– 0.1
– 0.03
–2mA
–1mA
5
(2)
0
0
20
40
60
80 100 120 140 160
0
–1
–2
–3
–4
–5
–6
–7
–8
25˚C
–25˚C
Ambient temperature Ta (˚C)
V
BE(sat)
— I
C
–3
I
C
/I
B
=5
–1
T
C
=–25˚C
100˚C
– 0.3
25˚C
– 0.1
– 0.03
– 0.01
– 0.01
– 0.03
– 0.1
– 0.3
–1
100
30
10
3
1
0.3
0.1
sc
on
t
on
, t
stg
, t
f
— I
C
tin
Switching time t
on
,t
stg
,t
f
(
µs
)
te
na
nc
e/
(A)
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5 (–I
B1
=I
B2
)
V
CC
=–100V
Ta=25˚C
ue
Collector current I
C
(A)
Collector current I
C
t
stg
t
f
t
on
0.03
0.01
0
– 0.2
– 0.4
– 0.6
– 0.8
–1.0
Collector current I
C
(A)
2
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
— I
C
f
T
— I
C
10000
3000
1000
300
100
30
10
3
1
Base to emitter saturation voltage V
BE(sat)
(V)
V
CE
=–5V
Forward current transfer ratio h
FE
1000
300
100
T
C
=100˚C
25˚C
–25˚C
30
10
3
Transition frequency f
T
(MHz)
V
CE
=–10V
f=1MHz
T
C
=25˚C
0.3
1
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
–1
0.1
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current I
C
(mA)
Collector current I
C
(A)
Area of safe operation (ASO)
Non repetitive pulse
T
C
=25˚C
–10
–3
–1
Di
I
CP
I
C
t=1ms
– 0.3
– 0.1
– 0.03
– 0.01
10ms
M
ain
300ms
– 0.003
– 0.001
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
PANASONIC [ PANASONIC SEMICONDUCTOR ]
