Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SC3311A
Unit: mm
4.0±0.2
3.0±0.2
s
Features
q
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–50
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54±0.15
EIAJ:SC–72
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
80
3.5
–60
–50
–7
160
460
– 0.3
V
MHz
pF
min
typ
max
–100
–1
Unit
nA
µA
V
V
V
*
h
FE
Rank classification
Q
160 ~ 260
R
210 ~ 340
S
290 ~ 460
h
FE
Rank
2.0±0.2
(Ta=25˚C)
0.7±0.1
marking
+0.2
0.45–0.1
s
Absolute Maximum Ratings
15.6±0.5
High foward current transfer ratio h
FE
.
Allowing supply with the radial taping.
Optimum for high-density mounting.
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
