Transistor
P
C
— Ta
500
–30
Ta=25˚C
450
–25
2SA1254
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(mW)
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Collector current I
C
(mA)
400
–20
I
B
=–250µA
–200µA
–15
–150µA
–10
–100µA
–50µA
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
–25˚C
–5
0
0
–2
–4
–6
–8
–10
–1
–3
–10
–30
–100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
h
FE
— I
C
–120
6
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=–10V
f=1MHz
I
E
=0
Ta=25˚C
C
re
— V
CE
Common emitter reverse transfer capacitance C
re
(pF)
5
I
C
=–1mA
f=10.7MHz
Ta=25˚C
4
Forward current transfer ratio h
FE
–100
Ta=75˚C
–80
5
25˚C
–25˚C
4
3
–60
3
2
–40
2
–20
1
1
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100
Collector current I
C
(mA)
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
f
T
— I
E
600
V
CB
=–10V
Ta=25˚C
24
P
G
— I
C
V
CE
=–10V
f=100MHz
Ta=25˚C
5
NF — I
E
V
CB
=–10V
f=100MHz
Ta=25˚C
4
Transition frequency f
T
(MHz)
500
20
400
16
Noise figure NF (dB)
–1
–3
–10
–30
–100
Power gain PG (dB)
3
300
12
2
200
8
100
4
1
0
0.1
0.3
1
3
10
30
100
0
– 0.1 – 0.3
0
0.1
0.3
1
3
10
Emitter current I
E
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
