Transistor
P
C
— Ta
800
–1.2
Ta=25˚C
700
–1.0
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
0
0
–1
–2
–3
–4
–5
–6
I
B
=–10µA
2SA1128
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
V
CE(sat)
— I
C
I
C
/I
B
=10
Collector power dissipation P
C
(mW)
Collector current I
C
(A)
– 0.8
–9µA
–8µA
–7µA
–6µA
–5µA
–4µA
–3µA
–2µA
–1µA
– 0.6
– 0.4
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.2
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
600
V
CE
=–2V
320
f
T
— I
E
V
CB
=–10V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
500
Transition frequency f
T
(MHz)
–1
–3
–10
–30
–10
–3
–1
Ta=–25˚C
75˚C
25˚C
Forward current transfer ratio h
FE
280
240
200
160
120
80
40
400
300
Ta=75˚C
25˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
200
–25˚C
100
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
0.1
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
80
Collector output capacitance C
ob
(pF)
70
60
50
40
30
20
10
0
–1
I
E
=0
f=1MHz
Ta=25˚C
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
