Transistor
P
C
— Ta
500
–80
Ta=25˚C
–70
–100
25˚C
Ta=75˚C
–80
2SA1127
I
C
— V
CE
–120
V
CE
=–5V
I
C
— V
BE
Collector power dissipation P
C
(mW)
450
Collector current I
C
(mA)
–60
–50
–40
–30
–20
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
–180µA
–160µA
–140µA
–120µA
–100µA
–80µA
–60µA
–40µA
Collector current I
C
(mA)
400
I
B
=–200µA
–25˚C
–60
–40
–20
–10
0
0
–2
–4
–6
–8
–10
–12
–20µA
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
I
C
/I
B
=10
600
h
FE
— I
C
240
V
CE
=–5V
f
T
— I
E
V
CB
=–5V
Ta=25˚C
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
Transition frequency f
T
(MHz)
–10
–30
–100
200
160
300
–25˚C
120
– 0.3
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
25˚C
Ta=75˚C
–25˚C
200
80
100
40
–1
–3
–10
–30
–100
0
– 0.1 – 0.3
0
–1
–3
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
10
100
I
E
=0
f=1MHz
Ta=25˚C
NV — I
C
V
CE
=–10V
90 G
V
=80dB
Function=FLAT
80
70
60
50
40
30
20
10
0
– 0.01
5kΩ
22kΩ
R
g
=100kΩ
Collector output capacitance C
ob
(pF)
9
8
7
6
5
4
3
2
1
0
–1
–3
–10
–30
–100
Noise voltage NV (mV)
– 0.03
– 0.1
– 0.3
–1
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
