Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
I
Features
•
High collector to emitter voltage V
CEO
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ
3.16
±0.1
8.0
+0.5
–0.1
3.2
±0.2
3.8
±0.3
11.0
±0.5
1.9
±0.1
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector to base voltage
Collector to
emitter voltage
2SC2497
2SC2497A
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
V
CBO
V
CEO
Rating
70
50
60
5
3
1.5
1.2
*1
5
*2
Junction temperature
Storage temperature
150
−55
to
+150
°C
°C
V
A
A
W
Unit
V
V
1
2
0.75
±0.1
4.6
±0.2
0.5
±0.1
0.5
±0.1
2.3
±0.2
3
1.76
±0.1
16.0
±1.0
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
1 : Emitter
2 : Collector
3 : Base
TO-126B-A1 Package
Note) *1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink
I
Electrical Characteristics
T
C
=
25°C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SC2497
2SC2497A
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
= 5 V, I
C
= 1 A
I
C
= 1.5 A, I
B
= 0.15 A
I
C
= 1.5 A, I
B
= 0.15 A
V
CB
= 5 V, I
E
=
−
0.5 A, f = 200 MHz
V
CB
= 20 V, I
E
= 0, f = 1 MHz
150
35
I
EBO
V
CBO
V
CEO
Conditions
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
B
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 1 mA, I
E
= 0
I
C
= 2 mA, I
B
= 0
70
50
60
80
220
1
1.5
V
V
MHz
pF
Min
Typ
Max
1
100
10
Unit
µA
µA
µA
V
V
Forward current transfer ratio
*
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Note) *: Rank classification
Rank
h
FE
R
80 to 160
S
120 to 220
188
3.05
±0.1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
