Transistor
2SA1022
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2295
Unit: mm
s
Features
q
q
2.8
–0.3
0.65±0.15
+0.2
+0.25
1.5
–0.05
0.65±0.15
0.95
High transition frequency f
T
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25˚C)
0.95
2.9
–0.05
1
1.9±0.2
+0.2
3
0.4
–0.05
+0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
2
1.45
+0.2
1.1
–0.1
Ratings
–30
–20
–5
–30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol
: E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CB
= –10V, I
E
= 1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA
f = 10.7MHz
150
70
– 0.1
– 0.7
300
2.8
22
1.2
min
typ
max
– 0.1
–100
–10
220
V
V
MHz
dB
Ω
pF
Unit
µA
µA
µA
*
h
FE
Rank classification
Rank
h
FE
B
70 ~ 140
EB
C
110 ~ 220
EC
Marking Symbol
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
0.16
–0.06
+0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
