Transistor
2SA1018
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC1473
5.0±0.2
Unit: mm
4.0±0.2
q
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
–250
–200
–5
–100
–70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
13.5±0.5
5.1±0.2
s
Features
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
1 2 3
2.3±0.2
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CEO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= –120V, I
B
= 0, Ta = 60˚C
I
C
= –100µA, I
B
= 0
I
E
= –1µA, I
C
= 0
V
CE
= –10V, I
C
= –5mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f= 1MHz
50
10
–200
–5
60
220
–1.5
V
MHz
pF
min
typ
max
–1
Unit
µA
V
V
*
h
FE
Rank classification
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
