Power Transistors
2SA0914
(2SA914)
Silicon PNP epitaxial planar type
Unit: mm
For audio system/pli drive
Complementary to 2SC1953
■
Features
•
A complementary pair with 2SC1953, is optimum for the pre-
driver stage of a 60 W to 100 W output amplifier
•
TO-126B package which requires no insulation plate for instal-
lation to the heat sink
φ
3.16
±0.1
8.0
+0.5
–0.1
3.2
±0.2
3.8
±0.3
11.0
±0.5
1.9
±0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−150
−150
−5
−50
−100
1.2
150
−55
to
+150
Unit
V
V
V
mA
mA
W
°C
°C
0.75
±0.1
4.6
±0.2
0.5
±0.1
0.5
±0.1
2.3
±0.2
3
1.76
±0.1
1
2
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
−100 µA,
I
B
= 0
I
E
=
−10 µA,
I
C
= 0
V
CB
= −100
V, I
E
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −30
mA, I
B
= −3
mA
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
−6
V, I
E
= 0, f = 1 MHz
70
5
130
Min
−150
−5
−1
330
−1
Typ
Max
Unit
V
V
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
130 to 220
S
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2003
SJD00005CED
16.0
±1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
±0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
