2SA0914
P
C
T
a
1.6
−80
−450 µA
−400 µA
−350 µA
−300 µA
−250 µA
−40
T
C
=
25°C
I
B
= −500 µA
I
C
V
CE
−120
I
C
V
BE
V
CE
= −5
V
25°C
T
C
=
100°C
−25°C
Collector power dissipation P
C
(W)
−100
Collector current I
C
(mA)
1.2
Collector current I
C
(mA)
−60
−80
0.8
−200 µA
−150 µA
−60
−40
0.4
−20
−100 µA
−50 µA
−20
0
0
40
80
120
160
0
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
600
h
FE
I
C
V
CE
= −5
V
300
f
T
I
E
V
CB
= −10
V
f
=
100 MHz
T
C
=
25°C
Forward current transfer ratio h
FE
−10
400
T
C
=
100°C
Transition frequency f
T
(MHz)
−10
−100
500
250
200
−1
25°C
T
C
=
100°C
−25°C
300
25°C
−25°C
150
200
100
−
0.1
100
50
−
0.01
−
0.1
−1
−10
−100
0
−
0.1
−1
0
1
10
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
I
E
=
0
f
=
1 MHz
T
C
=
25°C
5
4
3
2
1
0
−1
−10
−100
Collector-base voltage V
CB
(V)
2
SJD00005CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
