Power Transistors
2SA0886
(2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1847
φ
3.16
±0.1
3.8
±0.3
Unit: mm
8.0
+0.5
–0.1
3.2
±0.2
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−50
−40
−5
−1.5
−3
1.2
150
−55
to
+150
Unit
V
4.6
±0.2
0.75
±0.1
0.5
±0.1
0.5
±0.1
2.3
±0.2
3
1.76
±0.1
V
V
A
A
W
°C
°C
1
2
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
−1
mA, I
E
= 0
I
C
=
−2
mA, I
B
= 0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
A
I
C
= −1.5
A, I
B
= −
0.15 A
I
C
= −2
A, I
B
= −
0.2 A
V
CB
= −5
V, I
E
=
0.5 A, f
=
200 MHz
V
CB
=
−20
V, I
E
= 0, f = 1 MHz
150
45
80
Min
−50
−40
−1
−100
−10
220
−1.0
−1.5
Typ
Max
Unit
V
V
µA
µA
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
80 to 160
R
120 to 220
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00003BED
16.0
±1.0
•
Output of 4 W can be obtained by a complementary pair with
2SC1847
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9
±0.1
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
±0.1
■
Features
11.0
±0.5
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
