2SA0879
P
C
T
a
1.2
−120
I
C
V
CE
T
a
=
25°C
I
B
= −2
mA
−1.8
mA
−1.6
mA
−1.4
mA
−1.2
mA
−1.0
mA
−
0.8 mA
−
0.6 mA
−
0.4 mA
−120
I
C
I
B
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(W)
1.0
−100
−100
Collector current I
C
(mA)
Collector current I
C
(mA)
0.8
−80
−80
0.6
−60
−60
0.4
−40
−40
0.2
−20
−
0.2 mA
−20
0
0
20
40
60
80 100 120 140 160
0
0
−2
−4
−6
−8
−10
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
−2.4
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
I
B
V
BE
−2.4
−120
V
CE
= −10
V
T
a
=
25°C
−100
I
C
V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
V
CE
= −10
V
25°C
T
a
=
75°C
−25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
−2.0
Collector current I
C
(mA)
Base current I
B
(mA)
−10
−1.6
−80
−1.2
−60
−1
25°C
−25°C
T
a
=
75°C
−
0.8
−40
−
0.1
−
0.4
−20
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0
−1.2
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
−
0.01
−
0.1
−1
−10
−100
Base-emitter voltage V
BE
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
I
C
300
V
CE
= −10
V
160
140
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
16
14
12
10
8
6
4
2
0
−1
V
CB
= −10
V
f
=
100 MHz
T
a
=
25°C
C
ob
V
CB
f
=
1 MHz
I
E
=
0
T
a
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
250
120
100
80
60
40
20
200
T
a
=
75°C
150
25°C
100
−25°C
50
0
−
0.1
−1
−10
−100
0
0.1
1
10
100
−10
−100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
2
SJC00006BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
