2SA0719, 2SA0720
P
C
T
a
800
−1
200
I
C
V
CE
T
a
=
25°C
−800
−700
I
C
I
B
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
700
600
500
400
300
200
100
0
−1
000
Collector current I
C
(mA)
−800
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
−600
−400
−200
0
20
40
60
80 100 120 140 160
0
Collector current I
C
(mA)
−600
−500
−400
−300
−200
−100
0
−2
−4
−6
−8
−10
0
−2
−4
−6
−8
−10
−12
0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
BE(sat)
I
C
−100
h
FE
I
C
600
V
CE
= −10
V
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
I
C
/ I
B
=
10
−1
T
a
=
75°C
25°C
−25°C
−10
Forward current transfer ratio h
FE
500
400
25°C
−1
T
a
= −25°C
75°C
−
0.1
300
T
a
=
75°C
200
25°C
−25°C
−
0.01
−
0.1
100
−
0.001
−1
−10
−100
−1
000
−
0.01
−1
−10
−100
−1
000
0
−
0.01
−
0.1
−1
−10
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
240
V
CB
= −10
V
T
a
=
25°C
50
C
ob
V
CB
Collector-emitter voltage
(V)
(Resistor between B and E) V
CER
I
E
=
0
f
=
1 MHz
T
a
=
25°C
V
CER
R
BE
−120
I
C
= −2
mA
T
a
=
25°C
Transition frequency f
T
(MHz)
200
40
−100
160
−80
30
120
−60
2SA0720
20
80
−40
2SA0719
−20
40
10
0
1
10
100
0
−1
−10
−100
0
1
10
100
1 000
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJC00002CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
