2SA0683, 2SA0684
P
C
T
a
1.2
−1.5
I
C
V
CE
T
a
=
25°C
I
B
= −10
mA
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
−1.2
V
CE
= −10
V
T
a
=
25°C
I
C
I
B
Collector power dissipation P
C
(W)
1.0
−1.25
−1.0
0.8
−1.0
0.6
−
0.75
0.4
−
0.50
0.2
−
0.25
Collector current I
C
(mA)
Collector current I
C
(A)
−
0.8
−
0.6
−
0.4
−
0.2
0
0
0
40
80
120
160
0
−2
−4
−6
−8
−10
0
0
−2
−4
−6
−8
−10
−12
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
V
BE(sat)
I
C
−100
h
FE
I
C
600
V
CE
= −10
V
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
I
C
/ I
B
=
10
−10
−10
Forward current transfer ratio h
FE
500
400
T
a
=
75°C
300
25°C
200
−25°C
−1
T
a
=
75°C
25°C
−25°C
−1
T
a
= −25°C
75°C
25°C
−
0.1
−
0.1
100
−
0.01
−
0.01
−
0.1
−1
−10
−
0.01
−
0.01
−
0.1
−1
−10
0
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
200
V
CB
= −10
V
T
a
=
25°C
C
ob
V
CB
50
V
CER
R
BE
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
I
E
=
0
f
=
1 MHz
T
a
=
25°C
−120
I
C
= −10
mA
T
a
=
25°C
Transition frequency f
T
(MHz)
160
40
−100
−80
120
30
−60
2SA0684
80
20
−40
2SA0683
40
10
−20
0
1
10
100
0
−1
−10
−100
0
0.1
1
10
100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJC00001CED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
