IGBTs
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
200
T
C
=25˚C
10
V
GE
=5V
T
C
=25˚C
2PG402
V
CE(sat)
I
C
200
I
C
V
GE
V
CE
=10V
T
C
=25˚C
Collector current I
C
(A)
3
V
GE
=8V
120
5V
4V
Collector current I
C
(A)
10
100
1000
160
160
120
1
Ta=0˚C
80
3V
100˚C
0.3
25˚C
80
40
2V
40
0
0
4
8
12
16
20
24
0.1
0.01
0
0.1
1
0
2
4
6
8
10
12
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
Gate to emitter voltage V
GE
(V)
C
ies
, C
oes
, C
res
V
CE
Input capacitance (Common emitter), Output capacitance (Common emitter),
Reverse transfer capacitance (Common emitter) C
ies
,C
oes
,C
res
(pF)
10000
15
P
C
Ta
Collector power dissipation P
C
(W)
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(1)
9
f=1MHz
T
C
=25˚C
C
ies
12
1000
100
C
oes
6
(2)
3
(3)
0
10
C
res
1
0
100
200
300
400
0
25
50
75
100
125
150
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
