IGBTs
2PG353
Insulated Gate Bipolar Transistor
s
Features
q
High breakdown voltage: V
CES
= 400V
q
Allowing to control large current: I
C(peak)
= 150A
q
Housed in the surface mounting package
unit: mm
6.5±0.1
5.3±0.1
4.35±0.1
3.0±0.1
q
For flash-light for use in a camera
2.3±0.1
0.2max.
5.5±0.1
7.3±0.1
9.8±0.1
s
Applications
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Symbol
Collector to emitter voltage
Gate to emitter voltage
Collector current
V
CES
I
C
V
GES
I
CP
P
C
DC
Pulse
Allowable power
dissipation
T
C
= 25°C
Ta = 25°C
Channel temperature
Storage temperature
T
ch
T
stg
s
Electrical Characteristics
(T
C
= 25°C)
nt
Parameter
Symbol
co
Collector to emitter cut-off current
Gate to emitter leakage current
I
CES
Collector to emitter breakdown voltage
e/
D
is
I
GES
V
CES
en
a
Collector to emitter
saturation voltage
nc
Gate threshold voltage
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
ai
Input capacitance (Common Emitter)
M
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
ea
Pl
pl d in
an c
se
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1.0±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
Ratings
400
Unit
V
V
A
A
0.85±0.1
4.6±0.1
2.5±0.1
2.5±0.1
0.75±0.1
0.5±0.1
0.05 to 0.15
1.0±0.1
±16
5
2.3±0.1
1
2
3
Marking
150
10
1
1: Emitter
2: Collector
3: Gate
U Type Package
W
150
°C
°C
−55
to +150
in
ue
Conditions
min
typ
max
10
Unit
µA
µA
V
V
V
V
CE
= 320V, V
GE
= 0
I
C
= 1mA, V
GE
= 0
V
GE
= ±12V, V
CE
= 0
±1
400
1
V
CE
= 10V, I
C
= 1mA
2
5
2
V
GE
= 12V, I
C
= 5A
V
GE
= 12V, I
C
= 150A
10
nt
V
CE
= 10V, V
GE
= 0, f = 1MHz
V
CC
= 300V, I
C
= 130A
1370
20
250
150
700
pF
ns
ns
ns
ns
V
GE
= 12V, R
g
= 25Ω
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
