IGBTs
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
200
T
C
=25˚C
10
V
GE
=24V
T
C
=25˚C
2PG303
V
CE(sat)
I
C
200
I
C
V
GE
V
CE
=10V
T
C
=25˚C
Collector current I
C
(A)
V
GE
=30V
120
20V
15V
3
Collector current I
C
(A)
10
100
1000
160
25V
160
120
Ta=0˚C
1
25˚C
80
10V
80
100˚C
0.3
40
40
0
0
2
4
6
8
10
12
0.1
0.01
0
0.1
1
0
4
8
12
16
20
24
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
Gate to emitter voltage V
GE
(V)
C
ies
, C
oes
, C
res
V
CE
Input capacitance (Common emitter), Output capacitance (Common emitter),
Reverse transfer capacitance (Common emitter) C
ies
,C
oes
,C
res
(pF)
10000
250
V
CE
, V
GE
Q
g
Collector to emitter voltage V
CE
(V)
Collector power dissipation P
C
(W)
I
C
=5A
T
C
=25˚C
25
15
P
C
Ta
(1) T
C
=Ta
(2) With a 50
×
50
×
2mm
Al heat sink
(3) Without heat sink
(1)
9
f=1MHz
T
C
=25˚C
C
ies
200
Gate to emitter voltage V
GE
(V)
20
12
1000
150
15
100
C
oes
100
10
6
(2)
3
(3)
0
0
25
50
75
100
125
150
10
C
res
50
5
1
0
100
200
300
400
0
0
10
20
30
40
50
0
60
Collector to emitter voltage V
CE
(V)
Gate charge amount Q
g
(nC)
Ambient temperature Ta (˚C)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
