This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG001
N-channel enhancement mode IGBT
For plasma display panel drive
For high speed switching circuits
Features
Low collector-emitter saturation voltage: V
CE(sat)
<
2.5 V
High speed hall time: t
f
= 250 nsec(typ.)
Package
Code
TO-220F-A1
Marking Symbol: 2PG001
Name
Pin
1. Gate
2. Collector
3. Emitter
Parameter
Symbol
V
CES
I
C
V
GES
I
CP
P
C
T
j
Collector-emitter voltage (E-B short)
Gate-emitter voltage (E-B short)
Collector current
Peak collector current
*
Power dissipation
T
a
= 25°C
Junction temperature
Storage temperature
T
stg
Note) *: PW
≤
10 us, Duty
≤ 1.0%
Electrical Characteristics
T
C
= 25°C±3°C
Parameter
Collector-emitter voltage (E-B short)
Symbol
V
CES
I
CES
I
GES
Gate-emitter threshold voltage
sc
on
Gate-emitter cutoff current (E-B short)
Collector-emitter saturation voltage
tin
ue
Collector-emitter cutoff current (E-B short)
V
GE(th)
C
ies
Short-circuit input capacitance (Common emitter)
Short-circuit output capacitance (Common emitter)
Gate charge load
Reverse transfer capacitance (Common emitter)
te
na
nc
e/
Di
V
CE(sat)
C
oes
C
res
Q
g
Q
ge
Q
gc
t
r
t
d(off)
t
f
Gate-emitter charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate-collector charge
t
d(on)
V
CC
= 150 V, I
C
= 30 A,
RL
≈
5
Ω,
V
GE
= 15 V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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Rating
300
30
40
±30
120
2.0
Unit
V
V
A
A
M
Di ain
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
C
= 25°C
W
G
Internal Connection
C
W
150
°C
°C
E
–55 to +150
Conditions
Min
300
Typ
Max
50
Unit
V
mA
mA
V
V
I
C
= 1 mA, V
GE
= 0
V
CE
= 240 V, V
GE
= 0
V
GE
=
±30
V, V
CE
= 0
±1.0
5.5
2.5
V
CE
= 10 V, I
C
= 1.0 mA
V
GE
= 15 V, I
C
= 30 A
3.0
2.0
86
14
25
5
10
580
pF
pF
pF
V
CE
= 25 V, V
GE
= 0, f = 1 MHz
ain
M
nC
nC
nC
ns
ns
ns
ns
V
CC
= 150 V, I
C
= 30 A, V
GE
= 15 V
87
400
120
150
Publication date : June 2007
SJN00003AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
