Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA720A
Unit: mm
5.0±0.2
4.0±0.2
s
Features
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
80
70
5
1
0.5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
2.54±0.15
1 2 3
0.45
–0.1
1.27
+0.2
13.5±0.5
High collector to emitter voltage V
CEO
.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
5.1±0.2
0.45
–0.1
1.27
+0.2
2.3±0.2
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
80
70
5
85
40
160
100
0.2
0.85
120
11
*2
min
typ
max
0.1
Unit
µA
V
V
V
340
0.6
1.5
V
V
MHz
20
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
