TOP232-234
Conditions
(Unless Otherwise Specified)
See Figure 34
Parameter
Symbol
Min
Typ Max
Units
SOURCE = 0 V; TJ = -40 to 125 °C
OUTPUT (cont.)
VM = Floating; IC = 4mA
VDS = 560 V; TJ = 125 °C
Off-State
Current
IDSS
150
µA
VM = Floating; IC = 4mA
ID = 100 µA; TJ = 25 °C
Breakdown
Voltage
700
V
BVDSS
tR
Rise
Time
ns
100
50
Measured in a Typical
Flyback Converter Application
Fall
Time
ns
V
tF
SUPPLY VOLTAGE CHARACTERISTICS
DRAIN Supply
Voltage
36
See Note D
Shunt Regulator
Voltage
VC(SHUNT)
V
5.60
5.85
50
6.10
IC = 4 mA
Shunt Regulator
Temperature Drift
ppm/°C
Output
MOSFET Enabled
VM = 0 V
lCD1
1.0
0.3
1.5
0.6
2.0
1.0
Control Supply/
Discharge Current
mA
Output
MOSFET Disabled
VM = 0 V
lCD2
NOTES:
A. For specifications with negative values, a negative temperature coefficient corresponds to an increase in
magnitude with increasing temperature, and a positive temperature coefficient corresponds to a decrease in
magnitude with increasing temperature.
B. Guaranteed by characterization. Not tested in production.
C. For externally adjusted current limit values, please refer to the graph (Current Limit vs. External Current Limit
Resistance) in the Typical Performance Characteristics section.
D. It is possible to start up and operate TOPSwitch-FX at DRAIN voltages well below 36 V. However, the CONTROL
pin charging current is reduced, which affects start-up time, auto-restart frequency, and auto-restart duty cycle.
Refer to the characteristic graph on CONTROL pin charge current (IC) vs. DRAIN voltage for low voltage operation
characteristics.
B
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PAM [ POWER ANALOG MICOELECTRONICS ]
