PKQ6208
Dual N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=250uA
Min.
60
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1.2
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Typ.
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Max.
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Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=1mA
VGS=10V , ID=2A
0.054
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V/℃
100
110
2.5
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RDS(ON)
Static Drain-Source On-Resistance2
m
VGS=4.5V , ID=1A
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VGS(th)
Gate Threshold Voltage
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V
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
-4.96
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mV/℃
VDS=48V , VGS=0V , TJ=25℃
VDS=48V , VGS=0V , TJ=55℃
1
IDSS
Drain-Source Leakage Current
uA
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5
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
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±100
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nA
S
VDS=5V , ID=2A
13.2
5
Qg
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VDS=48V , VGS=4.5V , ID=2A
nC
Qgs
Qgd
Td(on)
Tr
1.61
1.96
2
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Turn-On Delay Time
Rise Time
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VDS=30V , VGS=10V , RG=3.3,
23.8
12.4
19.6
511
38
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ns
ID=2A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
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Ciss
Coss
Crss
Input Capacitance
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VDS=15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
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25
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Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
Min.
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Typ.
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Max.
2.5
15
Unit
A
IS
ISM
VSD
trr
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
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A
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1.2
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V
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10.5
6
nS
nC
IF=2A , dI/dt=100A/µs , TJ=25℃
Qrr
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Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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