PKN3101
P-Ch 30V Fast Switching MOSFETs
Product Summary
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
BVDSS
RDSON
ID
-30V
52mΩ
-3.3A
Description
SOT23 Pin Configuration
The PKN3101 is the high cell density trenched
P-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The PKN3101 meet the RoHS and Green Product
requirement, with full function reliability approved.
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
-30
V
V
±20
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
-3.8
-3.1
-3.3
-2.7
A
A
-17
A
PD@TA=25℃
PD@TA=70℃
TSTG
Total Power Dissipation3
Total Power Dissipation3
1.32
0.84
1
W
W
℃
℃
0.64
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
RθJA
Parameter
Typ.
---
Max.
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
125
95
RθJA
---
RθJC
---
80
1
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