PKFM8100Y-D
thru
SSCCHHOOTTTTKKYY BBAARRRRIIEERR RREECCTTIIFFIIEERR
PKFM820Y-D
8.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
DPAK
0.264(6.70)
0.248(6.30)
0.048(1.20)
0.031(0.80)
0.098(2.50)
0.083(2.10)
0.217(5.50)
0.201(5.10)
0.024(0.60)
0.016(0.40)
0.244(6.20)
0.228(5.80)
.
0.024(0.60)
0.016(0.40)
0.114(2.90)
0.098(2.50)
0.039(1.00)
0.031(0.80)
0.185(4.70)
0.169(4.30)
0.032(0.80)
0.016(0.40)
Dimensions in inches and (millimeters)
FEATURES
MECHANICAL DATA
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, TO-252 / DPAK
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Mounting Position : Any
• Weight : Approximated 0.34 gram
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halo en-free part, ex.PKFM820Y-D-H.
AT TA=25oC unless otherwise noted)
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
MAX.
8.0
Symbol
IO
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
150
Forward surge current
A
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
0.5
20
+175
IR
Reverse current
mA
OC
Storage temperature
TSTG
-65
Operating
*1
*3
*4
*2
VRMS
VR
VF
SYMBOLS
VRRM
(V)
temperature
TJ, (OC)
(V)
(V)
(V)
*1 Repetitive peak reverse voltage
*2 RMS voltage
20
40
50
60
14
28
35
42
PKFM820Y-D
PKFM840Y-D
PKFM850Y-D
PKFM860Y-D
20
40
50
60
0.55
-55 to +125
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF = 8.0A
0.70
0.85
PKFM880Y-D
PKFM8100Y-D
80
80
56
70
100
100
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