P4SMA Series
SSUURRFFAACCEE MMOOUUNNTT TTRRAANNSSIIEENNTT VVOOLLTTAAGGEE SSUUPPPPRREESSSSOORR
Breakdown Voltage: 6.8 to 600 V
Peak Pulse Power: 400 W
SMA/DO-214AC
.055(1.40)
.062(1.60)
.098(2.50)
.114(2.90)
.157(4.00)
.181(4.60)
.006(.152)
.012(.305)
.078(2.00)
.096(2.44)
.030(0.76)
.060(1.52)
.004(.102)
.008(.203)
.188(4.80)
.208(5.28)
Dimensions in inches and (millimeters)
FEATURES
MECHANICAL DATA
● Glass passivated chip
● Case: Molded plastic
●
● Epoxy: UL 94V-0 rate flame retardant
400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
●
Lead: Solderable per MIL-STD-750, method
cycle):0.01 %
2026
● Low leakage
● Polarity: Color band denotes cathode end
except Bipolar
● Uni and Bidirectional unit
● Excellent clamping capability
● Very fast response time
● RoHS compliant
● Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified
Value
400
UNIT
W
Parameter
Symbol
PPP
Peak power dissipation with a 10/1000μs waveform(1)
Peak pulse current wih a 10/1000μs waveform(1)
Power dissipation on infinite heatsink at TL = 75 °C
Peak forward surge current, 8.3 ms single half sine-
IPP
PD
See Next Table
1.0
A
W
IFSM
40
A
wave unidirectional only(2)
Maximum instantaneous forward voltage at 25 A for
unidirectional only(3)
VF
3.5/5.0
V
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
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