FM120-N THRU FM1100-N
CHIP SCHOTTKY BARRIER RECTIFIER
1.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
SOD-323
0.106 (2.7)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
0.016(0.4) Typ.
FEATURES
MECHANICAL DATA
• Batch process design, excellent power dissipation offers
• Epoxy : UL94-V0rated flame retardant
• Case : Moldedplastic, SOD-323
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Terminals:Plated terminals, solderableper MIL-STD-750,
• Low power loss, high efficiency.
Method 2026
• High current capability, low forward voltage drop.
• High surge capability.
• Polarity : Indicatedby cathode band
• Mounting Position :Any
• Guardring for overvoltage protection.
• Very tiny plastic SMD package.
• Weight : Approximated 0.008gram
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
o
(AT TA=25 C unless otherwise noted)
MAXIMUM RATING
MAX.
1.0
Symbol
IO
TYP.
UNIT
A
MIN.
PARAMETER
CONDITIONS
Forward rectified current
See Fig.1
8.3ms single halfsine-wave superimposed on
rate load (JEDECmethode)
IFSM
30
Forward surge current
A
O
VR = VRRM TA = 25 C
0.5
10
IR
mA
Reverse current
O
VR = VRRM TA = 125 C
O
Thermal resistance
Junction to ambient
RèJA
CJ
90
C/W
pF
Diode junction capacitance
Storage temperature
120
f=1MHz and applied4V DC reversevoltage
O
+175
-65
TSTG
C
Operating
*1
*3
VR
*4
VF
*2
VRMS
SYMBOLS
VRRM
temperature
O
(V)
(V)
(V)
(V)
TJ, ( C)
20
30
40
50
14
21
28
35
FM120-N
FM130-N
FM140-N
20
30
40
50
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
0.55
-55 to +125
FM150-N
0.70
42
56
70
60
FM160-N
FM180-N
FM1100-N
60
80
-55 to +150
80
0.85
100
100
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