RED
1.
2.
2.1
2.2
Item No.: 193150
This specification applies to GaAlAs / GaAlAs LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy or Al
3.
Outlines (dimensions in microns)
n-Electrode
260
120
180
260
p-Electrode
Wire bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Luminous intensity *
Symbol
V
F
I
R
I
V
Conditions
I
F
= 20 mA
V
R
= 5 V
I
F
= 20 mA
min
typ
1,85
26,0
max
2,30
10
Unit
V
µA
mcd
nm
Peak wavelength
λ
P
I
F
= 20 mA
650
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
