PURE-GREEN
1.
2.
2.1
2.2
Item No.: 161230
This specification applies to AlInGaP / GaAs LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
Epitaxy AlInGaP
250
120
160
n-Substrate GaAs
n-Electrode
250
Wire bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Luminous intensity *
Symbol
V
F
I
R
I
V
Conditions
I
F
= 20 mA
V
R
= 4 V
I
F
= 20 mA
min
typ
2,20
11,0
560
max
2,50
100
Unit
V
µA
mcd
nm
dom. wavelength
λ
D
I
F
= 20 mA
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com